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discrete energy levels中文是什么意思

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  • The structure and energy level of the al clusters include 2 atoms to to 7atoms was calculated with ab initio method . discrete energy levels were found in the clusters , which is different from the energy level distribution of bulk materials
    計算方法是采用gaussia98程序的b3lyp的方法和全電子的基函數(shù)6 - 311 + g * ,對al2 ? al7小團簇的結(jié)構(gòu)和能級進行了abinitio計算。
  • It includes three steps : first , the experimental data in exfor format is evaluated . then , the optical potential parameters are got by using the code apom94 , and the direct inelastic discrete energy level reaction cross sections and angular distribution of every isotopes are got by using the code dppm . thus the ultimate commended data , which coincide with each other , can be obtained by using code nunf
    其具體過程是先對exfor實驗數(shù)據(jù)進行評價,給出實驗數(shù)據(jù)評價值,然后,利用程序apom94計算光學位,利用dppm程序計算直接非彈分立能級反應截面和角分布,在此基礎上,利用nunf理論計算程序獲得各同位素本身數(shù)據(jù)以及各同位素與天然元素數(shù)據(jù)自洽的最終推薦值。
  • Drawing the following concludes : ( 1 ) for the different metallic small particles with even number or odd number , the heat capacity is varied . the result is different from the bulk metal in essence . at the low temperature , the distribution of the discrete energy levels has important effects on the heat capacity ; at the high temperature , the distribution of the discrete energy levels has little effects because of the involving of mass electrons into the energy distribution
    得到如下結(jié)論: ( 1 )金屬小粒子所含的電子數(shù)奇偶性不同,其電子熱容是不同的,這與大塊金屬有本質(zhì)區(qū)別;低溫極限時電子熱容受能級分布的影響很大;而在高溫時,有大量的電子參與能量配位,比熱遵循大塊金屬的線性規(guī)律,能級分布的影響小時。
  • In this thesis , we demonstrate the study of si - based light emitting materials and its importance in si - based photonics integration . we discussed mainly the gain , differential gain , threshold current of si - based quantum - dot laser and the dependence of threshold current on temperature from discrete energy level of three - dimension confined quantum - dot and state density distribution of 5 - function
    本文闡述了si基光發(fā)射材料的研究進展及它在硅基光電子集成中的重要地位,從三維受限量子點的分立能級和函數(shù)狀的態(tài)密度分布入手,著重討論了si基量子點激光器的增益、微分增益、閾值電流及閾值電流的溫度特性。
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